BS IEC 63068 is a series of international standards for semiconductor devices that specifies the defects in silicon carbide homoepitaxial (SiC) wafer used in semiconductor devices.
BS IEC 63068‑2 is the second part of the series of documents that provides definitions and guidance in the use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.
BS IEC 63068‑2 exemplifies optical images to enable the detection and categorization of the defects for silicon carbide homoepitaxial (SiC) homoepitaxial wafers.
Note: BS IEC 63068‑2 deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope.
BS IEC 63068‑2 on semiconductor devices is useful for:
Silicon Carbide (SiC) is the chemical compound of both carbon and silicon. Silicon Carbide wafer possesses physical and electrical properties compared to both silicon and gallium arsenide for high power applications.
BS IEC 63068‑2 guides you in detecting the defects with surface morphological features by optical inspection methods that are evaluated with photoluminescence and X-ray topography test methods.
BS IEC 63068‑2 provides test methods and parameter settings as well as the defect evaluation process for silicon carbide homoepitaxial wafer.
A combined light source and optical components mentioned in BS IEC 63068‑2 are useful in achieving the sufficient uniformity of the illuminance on the wafer surface.
BS IEC 63068‑2 best practice guidelines can help you in detecting the defects of silicon carbide (SiC) homoepitaxial wafer on semiconductor devices in order to increase the yield and reliability of SiC devices.
As a result, the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process.
IEC 63068-2:2019