BS EN 62417:2010

What is BS EN 62417 - Metal-oxide semiconductor field effect transistors (MOSFETs) about?  

BS EN 62417 is an international standard used for Semiconductor devices.  

BS EN 62417 provides a wafer-level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide-semiconductor field-effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g., by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors. 

Note: BS EN 62417 is applicable to both active and parasitic field-effect transistors. 

Who is BS EN 62417 - Metal-oxide semiconductor field effect transistors (MOSFETs) for? 

BS EN 62417 on Semiconductor devices is useful for: 

• Manufacturers of semiconductor devices  
• Manufacturers of electronic devices  
• Manufacturers of automotive parts  
• Electronic engineers  
• Semiconductor foundries   

Why should you use BS EN 62417 - Metal-oxide semiconductor field effect transistors (MOSFETs)?  

A semiconductor device is an electronic component that contains the electronic properties of semiconductor materials.  

BS EN 62417 specifies the Mobile ion test method and test procedure for metal-oxide-semiconductor field-effect transistors. This test method is useful for calculating the threshold voltage. The test method is as follows: 

• Bias temperature stress that is useful in measuring the characteristics  
• Voltage sweep which helps in calculating gate bias 

This ensures the sustainability of these devices in different climatic conditions. By applying BS EN 62417, you can manufacture good quality semiconductor devices.