BS EN IEC 60749‑17 is the 17th part of an international standard that covers the attributes of semiconductor devices. This specifies the neutron irradiation test method for determining the degradation parameters of critical semiconductor devices.
BS EN IEC 60749‑17 specifies the neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. It gives technical specifications such as related terms and definitions, test apparatus, test procedure, safety requirements, etc.
BS EN IEC 60749‑17 describes the test that is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
BS EN IEC 60749‑17 on Semiconductor devices is applicable to:
Neutron irradiation is a neutron exposure process useful in determining the impact of radiation on materials properties and device performance. The neutron fluence used for device irradiation shall be obtained by measuring the amount of radioactivity induced in a fast-neutron threshold activation foil such as 32S, 54Fe, or 58Ni, irradiated simultaneously with the device.
BS EN IEC 60749‑17 specifies the test methods and test procedures of neutron irradiation for you which help users in detecting and measuring the degradation parameters of critical semiconductor devices as a function of neutron fluence.
With the help of BS EN IEC 60749‑17, you can determine the parameters are within specified limits after exposure to the specified level of neutron fluence in Semiconductor devices. By using BS EN IEC 60749‑17 you can manufacture good quality semiconductor devices.
BS EN IEC 60749‑17:2019 supersedes BS EN 60749‑17:2003, which is withdrawn. BS EN IEC 60749‑17:2019 includes some technical changes with respect to the previous edition as:
IEC 60749-17 Ed.2.0
EN 60749-17 Ed.2.0