PD IEC TS 62607 discusses key control characteristics for nanomanufacturing. PD IEC TS 62607‑6‑3 establishes a standardized method to determine the structural key control characteristic domain size for films consisting of graphene grown by chemical vapor deposition (CVD) on copper by substrate oxidation.
PD IEC TS 62607‑6‑3 provides a fast, facile and reliable method to evaluate graphene domains formed on copper foil or copper film for understanding the effect of the graphene domain size on properties of graphene and enhancing the performance of high-speed, flexible, and transparent devices using CVD graphene.
The domain size as derived by this method is defined as the mean value of the size of the domains in the observed area specified by the supplier in terms of cm2 or μm2.
The method is applicable for graphene grown on copper by CVD. The characterization is done on the copper foil before transfer to the final substrate. As the method is destructive, the samples cannot be re-launched into the fabrication process.
PD IEC TS 62607‑6‑3 on Domain size for graphene-based material is useful for:
Graphene with two-dimensional honeycomb structures of carbon atoms is known to have exceptional electrical, thermal, and mechanical properties. Because of these properties, graphene is considered for applications in high-speed, flexible, and transparent devices.
PD IEC TS 62607‑6‑3 provides the best practice guidance on the Sample preparation method, Measurement system, Calibration standards, Ambient conditions during measurement, Detailed protocol of the measurement procedure, and results for Domain size for graphene-based material by substrate oxidation.
IEC/TS 62607-6-3 Ed.1.0