ISO 21859 is an international standard on fine ceramics which covers a test method for plasma resistance of ceramic components in semiconductor manufacturing equipment.
ISO 21859 specifies a test method for plasma resistance of ceramic components in semiconductor manufacturing equipment. It is applicable to ceramic components of plasma-resistant components in dry etching chambers used in semiconductor manufacturing.
ISO 21859 on plasma resistance of ceramic components is useful for:
The Spitzer resistivity (or plasma resistivity) is an expression describing the electrical resistance in a plasma, which was first formulated by Lyman Spitzer in 1950. The Spitzer resistivity of plasma decreases in proportion to the electron temperature as Te^-3/2.
Semiconductor manufacturing equipment includes systems such as oxidation systems, epitaxial reactors, diffusion systems, ion implantation equipment, physical vapor deposition systems, chemical vapor deposition systems, photolithography equipment, and etching equipment
ISO 21859 concerns the measurement of erosion depth after a plasma resistance test and the measurement of surface roughness before and after a plasma resistance test.
ISO 21859 walks you through a test method for plasma resistance of ceramic components in semiconductor manufacturing equipment. This can help you get an idea on how semiconductor manufacturing equipment is resistant to plasma for ceramic components, this can make the entire production process more efficient.
ISO 21859